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DSS30101L
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features ADVANCE INFORMATION
* * * * * Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
* * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate)
C B
C
E
Top View Device Symbol
B
E
Pin Configuration
Ordering Information
Part Number DSS30101L-7
Notes:
Case SOT-23
Packaging 3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com
Marking Information
ZN3
ZN3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
DSS30101L
Document number: DS31588 Rev. 3 - 2
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DSS30101L
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value 50 30 5 2 1 Unit V V V A A
ADVANCE INFORMATION
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB MRP
Symbol PD RJA TJ, TSTG
Value 600 209 -55 to +150
Unit mW C/W C
0.8
400 P(pk), PEAK TRANSIENT POWER (W)
Single Pulse
PD, POWER DISSIPATION (W)
0.6
300
RJA(t) = r(t) * RJA RJA = 175C/W T J - T A = P * RJA(t) Duty Cycle, D = t1/t2
0.4
200
0.2
RJA = 209C/W
100
0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0
0 0.00001
0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9 D = 0.7 D = 0.5
0.1
D = 0.3 D = 0.1 RJA(t) = r(t) * RJA RJA = 175C/W P(pk)
D = 0.05
0.01
D = 0.02 D = 0.01 D = 0.005 D = Single Pulse
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01
0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response
100
1,000
10,000
DSS30101L
Document number: DS31588 Rev. 3 - 2
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DSS30101L
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Min 50 30 5 300 300 200 100 Typ 450 0.93 0.80 250 9 65 57 19 38 340 315 25 Max 100 50 100 900 75 125 200 200 1.1 1.1 15 Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150C VEB = 4V, IC = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 0.5A VCE = 5V, IC = 1A IC = 0.1A, IB = 1mA mV IC = 0.5A, IB = 50mA IC = 1.0A, IB = 100mA m IE = 1A, IB = 100mA V IC = 1A, IB = 100mA V VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, MHz f = 100MHz pF VCB = 10V, f = 1MHz pF VEB = 5V, f = 1MHz ns ns ns VCC = 5V, IC = 500mA, ns IB1 = -IB2 = 50mA ns ns Unit V V V nA A nA
ADVANCE INFORMATION
Collector-Emitter Saturation Voltage (Note 4) Equivalent On-Resistance (Note 4) Base-Emitter Saturation Voltage (Note 4) Base-Emitter Turn-on Voltage (Note 4) Transition Frequency Output Capacitance Input Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCE(sat) RCE(sat) VBE(sat) VBE(on) fT Cobo Cibo ton td tr toff ts tf
4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2.2 2.0
IB = 5mA
1,200 1,100 1,000 hFE, DC CURRENT GAIN 900 800 700 600 500 400 300 200 100
0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
TA = -55C TA = 25C TA = 150C
IC, COLLECTOR CURRENT (A)
1.8 1.6 1.4 1.2 1.0 0.8 0.6
IB = 1mA IB = 2mA IB = 4mA
TA = 125C TA = 85C
IB = 3mA
0.4 0.2 0
0 0.001
0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current
DSS30101L
Document number: DS31588 Rev. 3 - 2
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(c) Diodes Incorporated
DSS30101L
0.3
RCE(SAT), EQUIVALENT ON-RESISTANCE (V)
IC/IB = 10
500 450 400 350 300 250 200 150 100 50 0 0.01
TA = 85C T A = 25C TA = -55C T A = 125C T A = 150C IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
ADVANCE INFORMATION
0.2
0.1
T A = 150C TA = 125C TA = 85C TA = 25C TA = -55C
0 0.001
0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0.1 1 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Equivalent On-Resistance vs. Collector Current
10
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = 5V
1.4 1.2 1.0 0.8
TA = -55C IC/IB = 10
1.0
0.8
TA = -55C
0.6
TA = 25C
0.6 0.4
TA = 25C TA = 85C TA = 125C
0.4
T A = 85C T A = 150C TA = 125C
0.2
TA = 150C
0.2 0 0.001
0 0.001
0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current
150
120 CAPACITANCE (pF)
f = 1MHz
90
60
Cibo
30
0 0
Cobo
10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 10 Typical Capacitance Characteristics
5
DSS30101L
Document number: DS31588 Rev. 3 - 2
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DSS30101L
Package Outline Dimensions ADVANCE INFORMATION
A
BC
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
DSS30101L
Document number: DS31588 Rev. 3 - 2
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(c) Diodes Incorporated
DSS30101L
IMPORTANT NOTICE
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DSS30101L
Document number: DS31588 Rev. 3 - 2
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August 2010
(c) Diodes Incorporated

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